SiC-MOSFETの逆回復損失低減に関する実験的考察
SiC-MOSFETの逆回復損失低減に関する実験的考察
カテゴリ: 論文誌(論文単位)
グループ名: 【C】電子・情報・システム部門
発行日: 2017/02/01
タイトル(英語): Experimental Investigation on Reducing Reverse Recovery Loss of SiC-MOSFET
著者名: 丹羽 章雅((株)デンソー),小島 領太((株)デンソー),木村 友則((株)デンソー),笹谷 卓也((株)デンソー),磯部 高範(筑波大学),只野 博(筑波大学)
著者名(英語): Akimasa Niwa (DENSO CORPORATION), Ryota Kojima (DENSO CORPORATION), Tomonori Kimura (DENSO CORPORATION), Takanari Sasaya (DENSO CORPORATION), Takanori Isobe (University of Tsukuba), Hiroshi Tadano (University of Tsukuba)
キーワード: SiC-MOSFET,ボディダイオード,逆回復電荷,少数キャリア SiC-MOSFET,body diode,reverse recovery charge,minority carrier
要約(英語): Compared with Si-IGBT, SiC-MOSFET is expected to reduce switching loss and conduction loss of the low current region, and also to remove external freewheeling diode. It is generally known that SiC-MOSFET body diode has a small reverse recovery charge, nevertheless it can generates large loss depending on operating condition because of pin diode structure. It has been reported that the reverse recovery charge of pin diode could be reduced by shortening diode conduction time for Si devices, however the effect on SiC-MOSFET body diode has not yet become clear. This work clarifies the effect of shortening diode conduction time in reducing reverse recovery charge of SiC-MOSFET body diode. It was confirmed that when the diode conduction time was shortened to 60 ns, the reverse recovery charge of SiC-MOSFET body diode could be reduced by approximately 60%.
本誌: 電気学会論文誌C(電子・情報・システム部門誌) Vol.137 No.2 (2017) 大特集:電子・情報・システム部門誌 30周年記念「電子・情報・システム技術によるイノベーション」
本誌掲載ページ: 208-215 p
原稿種別: 論文/日本語
電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/137/2/137_208/_article/-char/ja/
受取状況を読み込めませんでした
