量子エネルギー輸送モデルを用いた先端MOSFET電気特性の解析

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2019/03/01

タイトル(英語): Analysis of Electrical Characteristics of Advanced MOSFETs by using a Quantum Energy Transport Model

著者名: 平岡　徹也（京都工芸繊維大学大学院工芸科学研究科），廣木　彰（京都工芸繊維大学大学院工芸科学研究科）

著者名(英語): Tetsuya Hiraoka (Graduate School of Science and Technology, Kyoto Institute of Technology), Akira Hiroki (Graduate School of Science and Technology, Kyoto Institute of Technology)

キーワード: 量子エネルギー輸送モデル，量子効果，非平衡現象，デバイスシミュレーション　　quantum energy transport (QET) model，quantum effect，non-equilibrium phenomena，device simulation

要約(英語): Improvement of device simulation is necessary to improve efficiency of development of advanced MOSFETs miniaturized to nanoscale. In particular, improvement of the fluid simulation model with quick calculation make a substantial contribution. The fluid simulation model includes a drift diffusion (DD) model, which is conventionally used, a quantum drift diffusion (QDD) model including quantum effects, and a quantum energy transport (QET) model including quantum effects and non-equilibrium phenomena.In this paper, we analyze the electric characteristics of advanced MOSFET using QET, QDD and DD models. It is found that the quantum effect greatly influences the analysis of the short channel effect. As the gate length becomes shorter, the influence of the non-equilibrium phenomenon on the electric characteristics becomes larger, and the superiority of QET becomes higher.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.139 No.3 （2019） 特集：フレキシブルセラミックスコーティング

本誌掲載ページ: 213-218 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/139/3/139_213/_article/-char/ja/