III-V族半導体を用いた耐圧1 kV級横型スーパー接合パワー素子のオン抵抗低減の可能性

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2019/09/01

タイトル(英語): Possibility of Reducing The On-resistance in 1 kV-class Lateral Superjunction Power Devices based on III-V Semiconductors

著者名: 櫛田　知義（トヨタ自動車（株）／豊田工業大学），榊　裕之（豊田工業大学）

著者名(英語): Tomoyoshi Kushida (Toyota Motor Corporation/Toyota Technological Institute), Hiroyuki Sakaki (Toyota Technological Institute)

キーワード: 横型パワー素子，III-V族系半導体，スーパー接合素子，ヘテロ接合　　lateral power devices，III-V semiconductors，superjunction devices，hetero junction

要約(英語): Potentials of lateral hetero superjunction (HSJ) power devices, that are based on III-V semiconductors such as GaN and GaAs, are analyzed theoretically to clarify how the product RON・A of their on-resistance RON and device area A depends on the breakdown voltage. By focusing on power devices having the breakdown voltage of about 1kV, we clarify to which level the specific on-resistance RON・A of various devices can be reduced by the selection of the device structures and materials. It has been found out that the lowest limit of RON・A for HSJ devices can be lower than that of Si insulated gate bipolar transistors, and also than that of vertical power FETs based on SiC and/or GaN. We note in particular that not only GaN-based HSJ devices but also GaAs-based HSJ devices possess outstanding potential because of the high electron mobility nature of these heterojunction structures.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.139 No.9 （2019） 特集：知能メカトロニクス分野と連携する知覚情報技術

本誌掲載ページ: 1015-1019 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/139/9/139_1015/_article/-char/ja/