量子ドリフト拡散モデルにおける歪みSiの移動度モデルパラメータの検討

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2020/11/01

タイトル(英語): Mobility Model Parameters of Strained Si by Using a Quantum Drift Diffusion Model

著者名: 田宮　優希（京都工芸繊維大学大学院工芸科学研究科），廣木　彰（京都工芸繊維大学大学院工芸科学研究科）

著者名(英語): Yuki Tamiya (Graduate School of Science and Technology, Kyoto Institute of Technology), Akira Hiroki (Graduate School of Science and Technology, Kyoto Institute of Technology)

キーワード: デバイスシミュレーション，量子ドリフト拡散モデル，歪みSi，移動度モデル　　device simulation，quantum drift diffusion (QDD) model，strained Si，mobility model

要約(英語): In this study, we have investigated model parameters of a low-field mobility model in the quantum drift diffusion (QDD) model for strained Si channel MOSFETs. Doping dependence of electron mobility in strained Si for different Ge contents in SiGe has been analyzed. The analysis has been performed by changing the Ge contents x from 0 to 0.4 in Si1-xGex. The model parameters of the mobility model are evaluated by comparing with the data calculated by using Monte Carlo method which replicates the experimental data with high accuracy. The effects on the current voltage characteristics for MOSFETs have been simulated by using the QDD model. It is found that the drain current increases as the strain increases and the rate of the increase saturates. The increase ratio of the drain current (at gate voltage is 0.7 V) is 31.0% in the range from x =0 to 0.2 and is only 4.27% in the range from x =0.2 to 0.55.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.140 No.11 （2020） 特集：電気関係学会関西連合大会

本誌掲載ページ: 1171-1175 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/140/11/140_1171/_article/-char/ja/