量子ドリフト拡散モデルにおける量子ポテンシャル係数の検討

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2020/11/01

タイトル(英語): Examination of Quantum Potential Coefficient in Quantum Drift Diffusion Model

著者名: 伊藤　大貴（京都工芸繊維大学大学院工芸科学研究科），廣木　彰（京都工芸繊維大学大学院工芸科学研究科）

著者名(英語): Daiki Ito (Graduate School of Science and Technology, Kyoto Institute of Technology), Akira Hiroki (Graduate School of Science and Technology, Kyoto Institute of Technology)

キーワード: 量子ドリフト拡散モデル，デバイスシミュレーション，MOSFET，量子閉じ込め効果　　quantum drift diffusion model，device simulation，MOSFET，quantum confinement effect

要約(英語): In this paper, we have investigated a quantum potential model in the quantum drift diffusion (QDD) model which allows to simulate quantum confinement effects in the inversion layer for advanced MOSFETs. The accuracy of the quantum potential model has been examined by comparing with the Schrodinger Poisson (SP) model which is able to simulate the quantum confinement effects with high accuracy. As a result, the quantum potential model shows quantum confinement effects of electron distributions in the inversion layer for an advanced MOSFET with a 1.5 nm gate oxide thickness. In addition, we have focused on the gate voltage dependence of the quantum potential coefficient in the quantum potential model. Electron densities calculated using the QDD model provide good accuracy in high gate voltage region. On the other hand, there is a discrepancy of electron densities using the QDD model comparing the SP model in subthreshold voltage region. It is found that the discrepancy comes from an assumption of constant model coefficient.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.140 No.11 （2020） 特集：電気関係学会関西連合大会

本誌掲載ページ: 1176-1181 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/140/11/140_1176/_article/-char/ja/