水溶性Sr3Al2O6犠牲層を用いたアナターゼ型Nb: TiO2エピタキシャル薄膜のフレキシブル化プロセス

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2021/07/01

タイトル(英語): Preparation of Flexible Thin Films from Epitaxially Grown Anatase Nb: TiO2 Using Water-Soluble Sr3Al2O6 Sacrificial Layer

著者名: 平岡　壮大（近畿大学大学院生物理工学研究科生体システム工学専攻），藤原　宏平（東北大学金属材料研究所），西川　博昭（近畿大学生物理工学部医用工学科）

著者名(英語): Akihiro Hiraoka (Graduate School of Biology-Oriented Science and Technology, Kindai University), Kohei Fujiwara (Institute for Materials Research, Tohoku University), Hiroaki Nishikawa (Faculty of Biology-Oriented Science and Technology, Kindai University

キーワード: フレキシブル，エピタキシャル薄膜，アナターゼ型Nb: TiO2，パルスレーザ堆積法　　flexible，epitaxial thin film，anatase Nb: TiO2，pulsed laser deposition

要約(英語): With the aim of developing new electronic functionalities for flexible devices, a transfer process for the preparation of flexible conductive thin films was examined using epitaxially grown anatase Nb: TiO2. Using pulsed laser deposition, water-soluble Sr3Al2O6 (SAO) was deposited on a single-crystalline LaAlO3 (100) substrate (LAO) as a sacrificial layer, followed by the epitaxial growth of anatase Nb: TiO2 on the sacrificial layer. The Nb: TiO2/SAO/LAO multilayer sample bonded onto a flexible polymer sheet via an adhesive tape was soaked into distilled water to transfer the epitaxially grown Nb: TiO2 thin film from SAO/LAO to the polymer sheet. The transferred anatase Nb: TiO2 thin film retained the clear X-ray diffraction peaks. Moreover, the areal transfer ratio was almost 100%, without the generation of significant impurity phases during the transfer process. On the basis of these results, the examined process was found promising for the preparation of flexible anatase Nb: TiO2 thin films. The voltage drop - current characteristics were measured successfully at room temperature for the transferred anatase Nb: TiO2 thin film using the standard four-probe method with gold electrodes.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.141 No.7 （2021） 特集：電子材料関連技術の最近の進展

本誌掲載ページ: 767-770 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/141/7/141_767/_article/-char/ja/