ArFエキシマレーザ誘起光脱離によるシリコーン薄膜の形成

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2022/04/01

タイトル(英語): Formation of Silicone Thin Films by ArF Excimer Laser Induced Photo-Desorption

著者名: 大越　昌幸（防衛大学校 電気情報学群電気電子工学科）

著者名(英語): Masayuki Okoshi (Department of Electrical and Electronic Engineering, National Defense Academy)

キーワード: ArFエキシマレーザ，光脱離，シリコーン，薄膜，親水性　　ArF excimer laser，photo-desorption，silicone，thin film，hydrophilicity

要約(英語): Low molecular weight silicones were ejected from silicone rubber target irradiated by a 193 nm ArF excimer laser through the photo-desorption. The ejected silicones were successfully deposited on a fused silica glass substrate in air. An approximately 0.3 mm of the target-substrate distance was required for the deposition. The deposited silicones became a thin film, showing an interference color when the ArF excimer laser was irradiated for a long time. Chemical bonding state of the formed thin films was analyzed by the Fourier transform infrared spectroscopy. The thin films were slightly different from the original silicone rubber structure, still it was composed of Si-O-Si bonds and Si-CH3 bonds. Also, OH bonds were clearly produced in the silicone thin films. As a result, contact angle of water on the silicone thin films was measured to be approximately 20 degrees, indicating a hydrophilic property.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.142 No.4 （2022） 特集：持続可能な社会発展に貢献するスマートレーザプロセシング

本誌掲載ページ: 450-453 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/142/4/142_450/_article/-char/ja/