量子ドリフト拡散モデルによるIn0.53Ga0.47As n-MOSFETの特性解析

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2023/02/01

タイトル(英語): Analysis of In0.53Ga0.47As n-MOSFET Characteristics using Quantum Drift Diffusion Model

著者名: 後藤　春樹（京都工芸繊維大学大学院工芸科学研究科），廣木　彰（京都工芸繊維大学大学院工芸科学研究科）

著者名(英語): Haruki Goto (Graduate School of Science and Technology, Kyoto Institute of Technology), Akira Hiroki (Graduate School of Science and Technology, Kyoto Institute of Technology)

キーワード: 量子ドリフト拡散モデル，デバイスシミュレーション，MOSFET，量子閉じ込め効果，Fermi-Dirac分布　　quantum drift diffusion model，device simulation，MOSFET，quantum confinement effect，Fermi-Dirac distribution

要約(英語): In this study, we have analyzed the Id-Vg characteristics of In0.53Ga0.47As n-MOSFETs using a quantum drift-diffusion (QDD) model with Fermi-Dirac (FD) distribution. In0.53Ga0.47As is a material with a smaller energy band gap than that of Si. The Id-Vg characteristics using FD distribution are compared with that using Maxwell-Boltzmann (MB) distribution. The difference of the characteristics between FD and MB distributions is observed as the applied gate voltage is increased. To investigate the difference, we have evaluated the electron density distributions and electrostatic potentials. We have calculated the energy difference between the bottom of the conduction band and the Fermi level derived from the electrostatic potential. It is found that the energy difference becomes smaller as the gate voltage is increased. The energy difference affects the difference in the Id-Vg characteristics. We have clarified that the relationship between the energy band gap and quantum confinement effects. It is found that it is necessary for the device simulation model using FD distribution to simulate MOSFETs with semiconductor materials with a smaller energy band gap.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.143 No.2 （2023） 特集：エネルギー分野へ適用されたAI・IoT技術

本誌掲載ページ: 159-164 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/143/2/143_159/_article/-char/ja/