パワー半導体デバイスの最新動向

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2024/03/01

タイトル(英語): Latest Technology Trends in Power Semiconductor Devices

著者名: 吉野　学（三菱電機（株）），竹内　悠次郎（（株）日立製作所），大井　幸多（富士電機（株）），中島　昭（国立研究開発法人産業技術総合研究所）

著者名(英語): Manabu Yoshino (Mitsubishi Electric Corporation), Yujiro Takeuchi (Hitachi, Ltd.), Kota Ohi (Fuji Electric Co., Ltd.), Akira Nakajima (National Institute of Advanced Industrial Science and Technology (AIST))

キーワード: ゲートドライバ，パワーMOSFET，IGBT，ワイドバンドギャップ半導体，SiC，GaN　　gate driver，power MOSFET，IGBT，wide band gap semiconductor，SiC，GaN

要約(英語): Efforts to achieve carbon neutrality are accelerating in order to solve global warming, a worldwide environmental problem. Efficient use of electric energy requires improved performance, higher functionality, and higher quality of power semiconductor devices, which are key components. In recent years, as the performance of silicon (Si)-based power devices is approaching the theoretical limit, there is a strong need to not only improve performance by optimizing the structure, but also to fully exploit the performance of the devices through device-usage techniques. Silicon carbide (SiC) and gallium nitride (GaN) devices, which are wide bandgap semiconductors, are already in the market, but in addition to further improvement of their characteristics, improvement of their reliability and durability is also required. In this review, we will introduce the technical trends of power semiconductor devices, focusing on the latest papers.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.144 No.3 （2024） 特集Ⅰ：スマートシステムと計測・制御技術　特集Ⅱ：シリコンならびにワイドバンドギャップパワー半導体の最新技術

本誌掲載ページ: 186-192 p

原稿種別: 解説／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/144/3/144_186/_article/-char/ja/