IGBTのターンオン電圧テールの解析

カテゴリ: 論文誌(論文単位)

グループ名: 【C】電子・情報・システム部門

発行日: 2024/03/01

タイトル(英語): Analysis on Turn-on Voltage Tail

著者名: 伊倉　巧裕（富士電機（株）），中川　明夫（合同会社中川コンサルティング事務所）

著者名(英語): Yoshihiro Ikura (Fuji Electric Co., Ltd.), Akio Nakagawa (Nakagawa Consulting Office, LLC.)

キーワード: IGBT，ターンオン損失，電圧テール　　IGBT，turn-on loss，voltage tail

要約(英語): In this work, we report a newly developed analysis method to investigate the mechanism of turn-on voltage tail of IGBT, aiming at the reduction of turn-on loss (Eon). This analysis method visualizes how gate-collector capacitance (CGC) increases by monitoring the potential change at the interface of the gate oxide and silicon around the gate trench during the turn-on process. It was found that, in the turn-on transient, initially, the collector-emitter voltage (VCE) decrease, and CGC increase drastically when the potential around the gate trench falls below the gate-emitter voltage (VGE) and that the sudden increase of CGC causes the turn-on voltage tail. Detailed TCAD analysis reveals that the electric potential around the gate trench is lowered by the dummy trench and causes the sudden increase of CGC. To verify that the dummy trench is origin of the turn-on voltage tail, full gate trench IGBT with no dummy trench is studied. In the full gate trench IGBT, neither sudden increase of CGC nor turn-on voltage tail are observed.

本誌: 電気学会論文誌C（電子・情報・システム部門誌） Vol.144 No.3 （2024） 特集Ⅰ：スマートシステムと計測・制御技術　特集Ⅱ：シリコンならびにワイドバンドギャップパワー半導体の最新技術

本誌掲載ページ: 240-244 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejeiss/144/3/144_240/_article/-char/ja/