Reliability Design for Neutron Induced Single-Event Burnout of IGBT

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2011/08/01

タイトル(英語): Reliability Design for Neutron Induced Single-Event Burnout of IGBT

著者名: Tomoyuki Shoji (Toyota Central R&D Labs., Inc.), Shuichi Nishida (Toyota Motor Corporation), Toyokazu Ohnishi (Toyota Motor Corporation), Touma Fujikawa (Toyota Motor Corporation), Noboru Nose (Toyota Motor Corporation), Kimimori Hamada (Toyota Motor Corporation), Masayasu Ishiko (Toyota Central R&D Labs., Inc.)

著者名(英語): Tomoyuki Shoji (Toyota Central R&D Labs., Inc.), Shuichi Nishida (Toyota Motor Corporation), Toyokazu Ohnishi (Toyota Motor Corporation), Touma Fujikawa (Toyota Motor Corporation), Noboru Nose (Toyota Motor Corporation), Kimimori Hamada (Toyota Motor Corporation), Masayasu Ishiko (Toyota Central R&D Labs., Inc.)

キーワード: single-event burnout (SEB) of IGBT，white neutron-irradiation，parasitic thyristor action，base push-out effect

要約(英語): Single-event burnout (SEB) caused by cosmic ray neutrons leads to catastrophic failures in insulated gate bipolar transistors (IGBTs). It was found experimentally that the incident neutron induced SEB failure rate increases as a function of the applied collector voltage. Moreover, the failure rate increased sharply with an increase in the applied collector voltage when the voltage exceeded a certain threshold value (SEB cutoff voltage).In this paper, transient device simulation results indicate that impact ionization at the n-drift/n+ buffer boundary is a crucially important factor in the turning-on of the parasitic pnp transistor, and eventually latch-up of the parasitic thyristor causes SEB. In addition, the device parameter dependency of the SEB cutoff voltage was analytically derived from the latch-up condition of the parasitic thyristor. As a result, it was confirmed that reducing the current gain of the parasitic transistor, such as by increasing the n-drift region thickness d was effective in increasing the SEB cutoff voltage. Furthermore, `white' neutron-irradiation experiments demonstrated that suppressing the inherent parasitic thyristor action leads to an improvement of the SEB cutoff voltage. It was confirmed that current gain optimization of the parasitic transistor is a crucial factor for establishing highly reliable design against chance failures.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.131 No.8 （2011） 特集：IPEC-Sapporo 2010

本誌掲載ページ: 992-999 p

原稿種別: 論文／英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/131/8/131_8_992/_article/-char/ja/