物理モデルに基づく並列接続pinダイオードのリカバリー特性解析

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2012/05/01

タイトル(英語): Reverse-Recovery Analysis of Parallel-Connected pin Diodes Using a Physics-Based Device Model

著者名: 堀口　剛司（三菱電機（株）先端技術総合研究所），杉本　貴之（東京工業大学 大学院理工学研究科 電気電子工学専攻），冨永　真志（東京工業大学 大学院理工学研究科 電気電子工学専攻），漆畑　廣明（東京工業大学 大学院理工学研究科 電気電子工学専攻），藤田　英明（東京工業大学 大学院理工学研究科 電気電子工学専攻），赤木　泰文（東京工業大学 大学院理工学研究科 電気電子工学専攻），木ノ内　伸一（三菱電機（株）先端技術総合研究所），大井　健史（三菱電機（株）先端技術総合研究所）

著者名(英語): Takeshi Horiguchi (Advanced Technology R&D Center, Mitsubishi Electric Corp.), Takayuki Sugimoto (Department of Electrical and Electronics Engineering, Tokyo Institute of Technology), Shinji Tominaga (Department of Electrical and Electronics Engineering, Tokyo Institute of Technology), Hiroaki Urushibata (Department of Electrical and Electronics Engineering, Tokyo Institute of Technology), Hideaki Fujita (Department of Electrical and Electronics Engineering, Tokyo Institute of Technology), Hirofumi Akagi (Department of Electrical and Electronics Engineering, Tokyo Institute of Technology), Shin-ichi Kinouchi (Advanced Technology R&D Center, Mitsubishi Electric Corp.), Takeshi Oi (Advanced Technology R&D Center, Mitsubishi Electric Corp.)

キーワード: 物理モデル，pinダイオード，リカバリー特性，並列接続　　physics model，pin diode，reverse recovery characteristics，parallel connection

要約(英語): This paper presents a reverse-recovery analysis of parallel-connected pin diodes using a physics-based device model. Since the pin diode model is based on a physical equation, the excess carrier distribution in the drift layer is estimated. A precise device model enables us to understand the transient characteristics of the parallel-connected pin diodes.We investigated the reverse-recovery characteristics of parallel-connected pin diodes by using a physics-based pin diode model. A difference in the wiring inductance or device temperature between the two pin diodes causes a transient current imbalance.Complicated reverse-recovery current waveforms are observed under both conditions―a difference in the wiring inductance and a difference in the device temperature. They result from a difference in the starting time of forming each depletion layer between the two pin diodes. Simulation results are in good agreement with experimental ones within an error of 10% in terms of the reverse-recovery loss. We find that a precise physics-based pin diode model is very useful when designing a power electronics apparatus.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.132 No.5 （2012）

本誌掲載ページ: 566-573 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/132/5/132_5_566/_article/-char/ja/