正電圧によりノーマリオン形GaN-FETを駆動可能なゲートドライブ回路の提案

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2013/06/01

タイトル(英語): A Novel Gate Drive Circuit Based on Positive Voltage Suitable for Normally-On Type GaN-FET

著者名: 服部　文哉（島根大学），梅上　大勝（島根大学），吉田　尭（島根大学），山本　真義（島根大学），山口　敦司（ローム（株））

著者名(英語): Fumiya Hattori (Shimane University), Hirokatsu Umegami (Shimane University), Takashi Yoshida (Shimane University), Masayoshi Yamamoto (Shimane University), Atsushi Yamaguchi (ROHM Co., Ltd.)

キーワード: ノーマリオン形GaN-FET，ゲート駆動回路　　normally-on type GaN-FET，gate drive circuit

要約(英語): In general, negative voltage power supplies have been required for the conventional gate drive circuit of the normally-on type GaN-FET. However, the conventional switched-mode power supply (SMPS) and power conversion system have positive voltage power supplies for controlling active power semiconductor switching devices. In this study, a novel gate drive circuit based on positive voltage power supplies for the normally-on type GaN-FET is proposed and discussed. The proposed gate drive circuit is compared with the conventional gate drive circuit using negative voltage power supplies experimentally. Finally, the effectiveness of the proposed circuit is indicated based on the comparative experimental results.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.133 No.6 （2013）

本誌掲載ページ: 666-667 p

原稿種別: 研究開発レター／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/133/6/133_666/_article/-char/ja/