Reverse-Blocking IGBTs with V-Groove Isolation Layer for Three-Level Power Converters

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門（英文）

発行日: 2013/11/01

タイトル(英語): Reverse-Blocking IGBTs with V-Groove Isolation Layer for Three-Level Power Converters

著者名: Haruo Nakazawa (Electronic Device Laboratory, Fuji Electric Co., Ltd.), David Hongfei Lu (Electronic Device Laboratory, Fuji Electric Co., Ltd.), Masaaki Ogino (Electronic Device Laboratory, Fuji Electric Co., Ltd.), Tohru Shirakawa (Device Development De

著者名(英語): Haruo Nakazawa (Electronic Device Laboratory, Fuji Electric Co., Ltd.), David Hongfei Lu (Electronic Device Laboratory, Fuji Electric Co., Ltd.), Masaaki Ogino (Electronic Device Laboratory, Fuji Electric Co., Ltd.), Tohru Shirakawa (Device Development Dept., Fuji Electric Co., Ltd.), Yoshikazu Takahashi (Electronic Device Laboratory, Fuji Electric Co., Ltd.)

キーワード: RB-IGBT，three-level power converter，hybrid isolation process，thermal diffusion，V-groove

要約(英語): Multilevel power converters are among the most effective approaches to reduce power loss and to improve efficiency in power conversion systems. Reverse-blocking IGBTs (RB-IGBTs) have been improved and extended to higher breakdown voltage to be used as bidirectional switches in multilevel converter applications. In this work, a hybrid isolation process by combining thermal diffusion and V-Groove etching is developed to form 1200-1700-V RB-IGBTs. The details on 1700-V RB-IGBTs are presented in this paper. Compared with that of full diffusion, the thermal budget of the frontside surface deep boron diffusion has been reduced to less than one-third. Sufficient reverse-blocking capability and switching robustness have been successfully demonstrated. At the same switching loss level, on-state voltage of a 50A-rated planar gate RB-IGBT is reduced to approximately 1.9V compared with that of serially connected trench-gate field-stop IGBT (FS-IGBT) and free-wheeling diode (FWD). Experimental benchmarking on 1200-A module demonstrated that the energy loss in three-level inverter was reduced to 18% by using RB-IGBTs instead of IGBT and FWD pairs at typical switching frequencies for high-power, medium-voltage applications.

本誌: IEEJ Journal of Industry Applications Vol.2 No.6 （2013） Special Issue on Technologies of Rotating Machinery

本誌掲載ページ: 323-328 p

原稿種別: 論文／英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejjia/2/6/2_323/_article/-char/ja/