高精度パワーデバイスモデルによるSiCインバータのEMI解析

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2014/04/01

タイトル(英語): EMI Prediction Method for SiC Inverter by Developing an Accurate Model of Power Device

著者名: 前川　佐理（(株) 東芝　府中事業所），津田　純一（(株) 東芝　府中事業所），葛巻　淳彦（(株) 東芝　府中事業所），松本　脩平（(株) 東芝　府中事業所），餠川　宏（(株) 東芝　府中事業所），久保田　寿夫（明治大学理工学部）

著者名(英語): Sari Maekawa (TOSHIBA CORPORATION FUCHU OPERATIONS), Junichi Tsuda (TOSHIBA CORPORATION FUCHU OPERATIONS), Atsuhiko Kuzumaki (TOSHIBA CORPORATION FUCHU OPERATIONS), Shuhei Matsumoto (TOSHIBA CORPORATION FUCHU OPERATIONS), Hiroshi Mochikawa (TOSHIBA CORPORATION FUCHU OPERATIONS), Hisao Kubota (Meiji University School of Science and Technology)

キーワード: 雑音端子電圧，EMI，シミュレーション，解析，パワーエレクトロニクス，インバータ　　conducted EMI noise，EMI，simulation，analysis，power electronics，inverter

要約(英語): In recent years, to reduce switching loss, the switching speed has been dramatically increased. The increase in EMI y the high time gradient may cause improper operation of neighbor devices. For the above reason, it is necessary to reduce the EMI by using noise filter. In order to estimate the EMI in the design phase before trial production, highly precise EMI analysis technology is required. Estimating the EMI for power electronics has been attempted by highly precise analytical modeling and modeling including parasitic components with electromagnetic-field analysis in recent years. In this study, Tri-phase 400Vrms inverter for system interconnections with SiC-JFET is analyzed. The frequency range is from 150kHz to 30MHz, as specified by CISPR11 Class A. The study results showed that the noise terminal voltage is analyzable with an error of ±10dB by highly precise modeling.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.134 No.4 （2014）

本誌掲載ページ: 461-467 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/134/4/134_461/_article/-char/ja/