物理モデルに基づく並列接続IGBTのPWM連続動作時における接合温度解析

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2014/05/01

タイトル(英語): Temperature Analysis of Parallel-Connected IGBTs under PWM Operating Conditions Using a Physics Model

著者名: 堀口　剛司（三菱電機（株）先端技術総合研究所），塚本　剛平（東京工業大学　大学院理工学研究科　電気電子工学専攻），冨永　真志（東京工業大学　大学院理工学研究科　電気電子工学専攻），西村　正（東京工業大学　大学院理工学研究科　電気電子工学専攻），藤田　英明（東京工業大学　大学院理工学研究科　電気電子工学専攻），赤木　泰文（東京工業大学　大学院理工学研究科　電気電子工学専攻），木ノ内　伸一（三菱電機（株）先端技術総合研究所），大井　健史（三菱電機（株）先端技術総合研究所），小山　正人（三菱電機（株）先端技術総

著者名(英語): Takeshi Horiguchi （Advanced Technology R&D Center, Mitsubishi Electric Corporation）, Kohei Tsukamoto （Department of Electrical and Electronic Engineering, Tokyo Institute of Technology）, Shinji Tominaga （Department of Electrical and Electronic Engineering, Tokyo Institute of Technology）, Tadashi Nishimura （Department of Electrical and Electronic Engineering, Tokyo Institute of Technology）, Hideaki Fujita （Department of Electrical and Electronic Engineering, Tokyo Institute of Technology）, Hirofumi Akagi （Department of Electrical and Electronic Engineering, Tokyo Institute of Technology）, Shin-ichi Kinouchi （Advanced Technology R&D Center, Mitsubishi Electric Corporation）, Takeshi Oi （Advanced Technology R&D Center, Mitsubishi Electric Corporation）, Masato Koyama （Advanced Technology R&D Center, Mitsubishi Electric Corporation）

キーワード: IGBT，物理モデル，接合温度，並列接続，電気・熱連成解析　　IGBT，physics model，junction temperature，parallel connection，electro-thermal simulation

要約(英語): This paper presents a physics-based IGBT model and a junction temperature analysis of parallel-connected IGBTs under PWM operating conditions using a physics-based IGBT model. The authors developed a physics-based IGBT model in which the excess carrier distribution within a drift region is represented using a one-dimentional ambipolar diffusion equation. The physics-based IGBT model makes it possible to predict losses and switching waveforms for converter applications. IGBTs are connected in parallel for medium- or large-capacity converters. In these applications, a transient current imbalance might occur owing to a difference in the wiring inductance or device characteristics between the IGBTs. An experiment shows that a difference in the wiring inductance between the two IGBTs causes a transient current imbalance, and the result is in excellent agreement with the result of a simulation using the physics-based IGBT model. The two parallel-connected IGBTs in this study correspond to a power module for 3.7kW motor drives, and the junction temperatures of both IGBTs are simulated by electro-thermal simulation under the following two conditions: a difference in the wiring inductance and a difference in the device characteristics. The temperature difference between the two IGBTs is approximately 4-7℃ under the applied conditions: a wiring inductance mismatch (20nH) and a threshold voltage mismatch (0.5V). The validity of the physics-based IGBT model is verified, and the model is found to be very useful when designing power converters.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.134 No.5 （2014）

本誌掲載ページ: 486-495 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/134/5/134_486/_article/-char/ja/