Gallium Arsenide IC Technology for Power Supplies on Chip

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門（英文）

発行日: 2015/07/01

タイトル(英語): Gallium Arsenide IC Technology for Power Supplies on Chip

著者名: Vipindas Pala (Cree Inc.), Han Peng (GE Global Research Center), Mona Mostafa Hella (Center for Industrial Electronics, Rensselaer Polytechnic Institute), T. Paul Chow (Center for Industrial Electronics, Rensselaer Polytechnic Institute)

著者名(英語): Vipindas Pala (Cree Inc.), Han Peng (GE Global Research Center), Mona Mostafa Hella (Center for Industrial Electronics, Rensselaer Polytechnic Institute), T. Paul Chow (Center for Industrial Electronics, Rensselaer Polytechnic Institute)

キーワード: power IC，pHEMT，GaAs

要約(英語): This paper presents a power IC technology platform based on AlGaAs/InGaAs/AlGaAs pseudomorphic field-effect transistors (pHEMTs) on a GaAs substrate. A quantitative assessment of a foundry-available 11-V GaAs pHEMT process indicates that owing to their superior material properties, the intrinsic figure of merit for pHEMT switching devices exhibits an order of magnitude improvement over state-of-the-art silicon NMOS transistors. The characterization results for GaAs pHEMTs with a breakdown voltage up to 47V are presented and shown to be comparable to GaN-based transistors for power switching applications. An integrated pHEMT DC-DC converter that can switch at frequencies above 100MHz is demonstrated. A 4.2-V pHEMT buck converter designed for envelope tracking applications is able to achieve 88% conversion efficiency at 100MHz.

本誌: IEEJ Journal of Industry Applications Vol.4 No.4 （2015） Special Issue on IPEC-Hiroshima

本誌掲載ページ: 434-438 p

原稿種別: 論文／英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejjia/4/4/4_434/_article/-char/ja/