GaN FET単相PWMインバータによる高キャリア周波数励磁時の鉄損特性

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2016/02/01

タイトル(英語): High-Carrier-Frequency Iron-Loss Characteristics Excited by GaN FET Single-Phase PWM Inverter

著者名: 田中　陽大（豊田工業大学 電磁システム研究室），古賀　尚子（豊田工業大学 電磁システム研究室），小木　諒介（豊田工業大学 電磁システム研究室），小田原　峻也（豊田工業大学 電磁システム研究室），藤崎　敬介（豊田工業大学 電磁システム研究室）

著者名(英語): Takahiro Tanaka (Electromagnetic Energy System Lab., Toyota Technological Institute), Shoko Koga (Electromagnetic Energy System Lab., Toyota Technological Institute), Ryosuke Kogi (Electromagnetic Energy System Lab., Toyota Technological Institute), Shunya Odawara (Electromagnetic Energy System Lab., Toyota Technological Institute), Keisuke Fujisaki (Electromagnetic Energy System Lab., Toyota Technological Institute)

キーワード: GaN FET，単相インバータ，キャリア周波数，デッドタイム，鉄損　　GaN FET，signle phase inverter，carrier frequency，dead time，iron loss

要約(英語): The Iron loss at higher carrier frequencies up to 190kHz is measured by a single-phase GaN FET inverter because sinusoidal-like waveform is expected to be obtained by new material devices such as those based on SiC or GaN. The measured data show that iron loss excited by PWM inverter does not converge to the iron loss by sinusoidal excitation because the fluctuation in the magnetic field does not converge to zero, even when carrier frequency is 190kHz. Moreover, the iron loss even increases at some carrier frequency for a long dead time. Because of the properties of the GaN FET device, the ON voltage of the GaN FET during the dead time period becomes large, and the minor loop shape in the magnetic hysteresis curve becomes large. These phenomena are observed for a constant applied DC voltage and also for a constant modulation factor constant condition. The properties of the power semiconductor and the dead time of the inverter seriously influence the increase in the iron loss.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.136 No.2 （2016）

本誌掲載ページ: 110-117 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/136/2/136_110/_article/-char/ja/