SiC-MOSFETの電流センス機能を用いたデッドタイム制御回路

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2016/02/01

タイトル(英語): Dead Time Control Circuit using the Current Sensor of SiC-MOSFET

著者名: 丹羽　章雅（（株）デンソー 基礎研究所），今澤　孝則（（株）デンソー 基礎研究所），木村　友則（（株）デンソー 基礎研究所），笹谷　卓也（（株）デンソー 基礎研究所），磯部　高範（筑波大学），只野　博（筑波大学）

著者名(英語): Akimasa Niwa (Research Laboratories, DENSO CORPORATION), Takanori Imazawa (Research Laboratories, DENSO CORPORATION), Tomonori Kimura (Research Laboratories, DENSO CORPORATION), Takanari Sasaya (Research Laboratories, DENSO CORPORATION), Takanori Isobe (University of Tsukuba), Hiroshi Tadano (University of Tsukuba)

キーワード: SiC-MOSFET，駆動回路，デッドタイム制御，同期整流　　SiC-MOSFET，drive circuit，dead time control，synchronous rectification

要約(英語): Compared with Si-IGBT, a silicon carbide (SiC) -MOSFET is expected to reduce the switching loss and conduction loss of the low-current region, and also remove external freewheeling diode. However, because the SiC-MOSFET body diode has high forward voltage, the diode conduction loss increases during dead time, and therefore, its loss reduction effect decreases. This work proposes a novel dead time control circuit using a current sensing transistor integrated with SiC-MOSFET. The proposed circuit has a high responsiveness and high robustness against switching noise, and the dead time can be shortened to within 0.1µs without using external components. In addition, it has not only the dead time control but also the short-circuit current detection, which is the radical function of a current sensor. In the experimental result of using a 10kW boost converter with SiC-MOSFET, the efficiency of the proposed circuit was 1% higher than that without it.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.136 No.2 （2016）

本誌掲載ページ: 145-151 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/136/2/136_145/_article/-char/ja/