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超高速エレベータ向けSiC適用小型変換器の検討

超高速エレベータ向けSiC適用小型変換器の検討

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カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2017/04/01

タイトル(英語): Converter using SiC-MOSFET for Ultra High-speed Elevator

著者名: 加藤 かおる((株)日立製作所 研究開発グループ),森 和久((株)日立製作所 研究開発グループ),松本 洋平((株)日立製作所 ビルシステムビジネスユニット),藪内 達志((株)日立製作所 ビルシステムビジネスユニット),大沼 直人((株)日立製作所 ビルシステムビジネスユニット)

著者名(英語): Kaoru Katoh (Hitachi, Ltd. Research & Development Group), Kazuhisa Mori (Hitachi, Ltd. Research & Development Group), Yohei Matsumoto (Hitachi, Ltd. Building Systems Business Unit), Tatsushi Yabuuchi (Hitachi, Ltd. Building Systems Business Unit), Naoto Ohnuma (Hitachi, Ltd. Building Systems Business Unit)

キーワード: 変換器,SiC-MOSFET,エレベータ  converter,SiC-MOSFET,elevator

要約(英語): In this study, we developed a converter based on SiC-MOSFET for use in ultra-high-speed elevators, with a reduced volume of 15% compared with the conventional converter. We succeeded in reducing the power loss of the converter unit by 56% compared to the conventional converter in one round trip under high temperature condition. Recently, because of their useful characteristics, wide-gap semiconductors, such as SiC and GaN, have gained considerable attention for use in various application in the power electronics systems. Therefore, we studied the use of a converter in elevator systems based on SiC-MOSFET. We used a 1200V/800A SiC-MOSFET module for the converter unit. We developed a prototype of the converter unit and the control panel by applying for the SiC-MOSFET module for an ultra high-speed elevator. As a result, the setting area of the control panel (main part) becomes less than 43% of the conventional panel. We tried to demonstrate the working of a 68kW elevator by applying the prototype control panel. Because of the characteristic of the switching loss of SiC-MOSFET, the power loss of the converter unit has almost no dependence on temperature. An energy-saving effect of approximately 17% was acheived in the total elevator system in one round trip under high temperature condition.

本誌: 電気学会論文誌D(産業応用部門誌) Vol.137 No.4 (2017)

本誌掲載ページ: 334-341 p

原稿種別: 論文/日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/137/4/137_334/_article/-char/ja/

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