SiC-MOSFETを用いたZソースインバータの上下短絡動作によるボディダイオード無通電運転
SiC-MOSFETを用いたZソースインバータの上下短絡動作によるボディダイオード無通電運転
カテゴリ: 論文誌(論文単位)
グループ名: 【D】産業応用部門
発行日: 2018/03/01
タイトル(英語): Eliminating Body-diode Conduction of Z-source Inverter Using SiC-MOSFET by Short-through Operation
著者名: 飯嶋 竜司(筑波大学 数理物質科学研究科),磯部 高範(筑波大学 数理物質科学研究科),只野 博(筑波大学 数理物質科学研究科)
著者名(英語): Ryuji Iijima (Graduate School of Pure and Applied Sciences, University of Tsukuba), Takanori Isobe (Graduate School of Pure and Applied Sciences, University of Tsukuba), Hiroshi Tadano (Graduate School of Pure and Applied Sciences, University of Tsukuba)
キーワード: Zソースインバータ,SiC-MOSFET,ボディダイオード,SiC-SBD Z-source inverter,SiC-MOSFET,Body-diode,SiC-SBD
要約(英語): A Z-source inverter (ZSI) can achieve boost and inverter function in single stage without a boost converter by using a short-through mode which shorts legs of the inverter. And it can be more high power density by employing a SiC-MOSFET which can drive high frequency operation. When employing the SiC-MOSFET for a conventional inverter, the SiC-MOSFET needs an additional SiC-SBD connected in parallel to avoid body-diode conduction in dead-time. This SiC-SBD becomes disadvantage for size reduction of the circuit, however conducting the body-diode is cause of degradation of the SiC-MOSFET and decreases reliability of the circuit. Thus, to remove the SiC-SBD from the the conventional inverter is difficult. This paper proposes to eliminate the body-diode conduction in the SiC-MOSFET on the Z-source inverter by using short-through operation without an additional SiC-SBD. From experimental investigation using a quasi-Z-source inverter which is one of the Z-source topology, it was confirmed that a current does not flow into the SiC-MOSFET body-diode by using the proposed space vector modulation including the short-through operation. This result shows that the Z-source inverter can take full advantage of the SiC-MOSFET.
本誌: 電気学会論文誌D(産業応用部門誌) Vol.138 No.3 (2018) 特集:スマートな社会を支えるインフラ・設備関連技術
本誌掲載ページ: 250-256 p
原稿種別: 論文/日本語
電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/138/3/138_250/_article/-char/ja/
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