ディジタル回路を適用したSiC-MOSFET直列接続における電圧不平衡の改善法

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2018/05/01

タイトル(英語): Digital Control for Voltage Balancing under Switching Operations of Series Connection SiC-MOSFETs

著者名: 神宮　克哉（首都大学東京），和田　圭二（首都大学東京）

著者名(英語): Katsuya Shingu (Tokyo Metropolitan University), Keiji Wada (Tokyo Metropolitan University)

キーワード: ディレイライン，寄生パラメータ，直列接続，SiC-MOSFET　　delay line，parasitic parameters，series connection，SiC-MOSFET

要約(英語): Recently, there has been research and development of SiC power devices, and 1,200V SiC-MOSFETs have become commercially available. SiC power devices are suitable for realizing higher voltage applications, and the power devices are connected in series for maintaining the voltage rating. However, the parasitic parameters of the devices are not the same, and it cannot be controlled the voltage sharing. This paper proposes a digital control method for the voltage balancing of series connection SiC-MOSFETs under turn-off operations. In order to compensate the voltage unbalance conditions, this paper presents a time-adjustment gate-drive circuit using an 8-bit programmable delay line. Its performance verified analytically, and experimental results using a buck chopper circuit rated at 1,200V SiC-MOSFETs are presented.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.138 No.5 （2018） 特集：平成29年産業応用部門大会

本誌掲載ページ: 417-424 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/138/5/138_417/_article/-char/ja/