A Meta-Parameterized Approach for the Evaluation of Semiconductor Technologies―A Comparison between SiC-MOSFET and Si-IGBT Technologies―

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門（英文）

発行日: 2018/05/01

タイトル(英語): A Meta-Parameterized Approach for the Evaluation of Semiconductor Technologies―A Comparison between SiC-MOSFET and Si-IGBT Technologies―

著者名: Rene Barrera-Cardenas (Faculty of Pure and Applied Sciences, University of Tsukuba), Takanori Isobe (Faculty of Pure and Applied Sciences, University of Tsukuba), Marta Molinas (Department of Engineering Cybernetics, Norwegian University of Science and Te

著者名(英語): Rene Barrera-Cardenas (Faculty of Pure and Applied Sciences, University of Tsukuba), Takanori Isobe (Faculty of Pure and Applied Sciences, University of Tsukuba), Marta Molinas (Department of Engineering Cybernetics, Norwegian University of Science and Te

キーワード: semiconductor evaluation，power losses，SiC MOSFET，IGBT，volume

要約(英語): This paper presents a meta-parameterized approach for the evaluation of Power Switch Modules (PSMs) in power converters. General models and parameters for the evaluation of power losses and volume of a PSM are presented. Then, meta-parameterization is performed for two semiconductor devices that have been successfully commercialized for low/medium power converters, Si-IGBTs, and SiC-MOSFETs. A comparative analysis based on the efficiency and power density of the considered technologies is presented. A bidirectional non-isolated DC-DC converter topology is considered as application example in order to show how meta-parameters can be used in comparative studies to optimize device selection.

本誌: IEEJ Journal of Industry Applications Vol.7 No.3 （2018） Special Issue on “SPC-Power Electronics and Its Applications”

本誌掲載ページ: 210-217 p

原稿種別: 論文／英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejjia/7/3/7_210/_article/-char/ja/