大容量半導体モジュールの配線インダクタンスを用いた電流検出回路の開発

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2018/08/01

タイトル(英語): Development of Current Detecting Circuit with Wiring Inductance of Power Semiconductor Module

著者名: 長瀧　仁貴（茨城工業高等専門学校），長洲　正浩（茨城工業高等専門学校），稲葉　政光（（株）日立パワーデバイス），根本　泰宏（長岡技術科学大学）

著者名(英語): Masaki Nagataki (National Institute of Technology, Ibaraki College), Masahiro Nagasu (National Institute of Technology, Ibaraki College), Masamitsu Inaba (Hitachi Power Semiconductor Device, Ltd.), Yasuhiro Nemoto (Nagaoka University of Technology)

キーワード: 電流検出回路，配線インダクタンス，パワー半導体モジュール_x000D_　　current detecting circuit，wiring inductance，power semiconductor module

要約(英語): A high voltage and large capacity power semiconductor module has a sense-emitter terminal and emitter terminal for the gate drive. There exists a parasitic wiring inductance between the sense-emitter terminal and emitter terminal. When current flows through a module, induction voltage (differential value of module current) is generated. In this study, we develop a circuit that detects the current flowing through the module by integrating the induction voltage. The integrator has the problem of integral error. It was confirmed that this problem can be solved by adopting a method of reducing the output of the integrator during energization. Further, resistance exists in the wiring inductance. It was shown that this can be solved by using the metal-oxide-semiconductor field-effect-transistor (MOSFET). Finally, experiments were conducted using a 3300V/450A IGBT module. Through the results of the experiments, it was confirmed that the proposed circuit can detect the current and abnormal current, such as the short circuit current through a power semiconductor module.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.138 No.8 （2018）

本誌掲載ページ: 676-683 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/138/8/138_676/_article/-char/ja/