ゲート信号遅延によるSiC-MOSFET直列接続時における電圧バランス制御

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2018/11/01

タイトル(英語): Voltage Balancing Control based on Gate Signal Delay in Series Connection of SiC-MOSFET

著者名: 神宮　克哉（首都大学東京），和田　圭二（首都大学東京）

著者名(英語): Katsuya Shingu (Tokyo Metropolitan University), Keiji Wada (Tokyo Metropolitan University)

キーワード: 直列接続，SiC-MOSFET，電圧フィードバック　　series connection，SiC-MOSFET，voltage feedback

要約(英語): Recently, research and development of SiC power devices have been done, and SiC power devices have become commercially available. The SiC power devices are suitable for realizing to medium voltage applications. Since, the voltage rating of commercial power devices is limited to less than 1.2kV, they should be connected in series to maintain a higher voltage rating. However parasitic parameters of these devices are not the same, and therefore the voltage sharing during turn-off operations cannot be controlled. This paper proposes a digital control for the voltage balancing of series connected SiC-MOSFETs during turn-off operations. In order to compensate the voltage unbalance conditions, this paper presents a time-adjustment gate-drive circuit using a digital delay line; experimental results for the feedback control using a buck chopper circuit are also presented.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.138 No.11 （2018）

本誌掲載ページ: 864-870 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/138/11/138_864/_article/-char/ja/