GaN-HEMTデバイスを用いた電流不連続モード系統連系インバータのMHz運転における動作検証および損失の解析

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2019/03/01

タイトル(英語): Experimental Verification and Loss Analysis of MHz-operating Discontinuous Current-mode Grid-tied Inverter using GaN-HEMT Device

著者名: 山野寺　大地（筑波大学 数理物質科学研究科），飯嶋　竜司（筑波大学 数理物質科学研究科），磯部　高範（筑波大学 数理物質科学研究科），只野　博（筑波大学 数理物質科学研究科）

著者名(英語): Daichi Yamanodera (Department of Pure and Applied Sciences, University of Tsukuba), Ryuji Iijima (Department of Pure and Applied Sciences, University of Tsukuba), Takanori Isobe (Department of Pure and Applied Sciences, University of Tsukuba), Hiroshi Tadano (Department of Pure and Applied Sciences, University of Tsukuba)

キーワード: GaNデバイス，電流不連続モード，系統連系インバータ　　GaN device，discontinuous current mode，Grid-tied inverter

要約(英語): This paper studies a grid-tied inverter using a gallium nitride (GaN) device aiming for passive component size reduction through very-high-switching-frequency operation. This paper proposes to apply a discontinuous current mode (DCM), which does not require dead time and current feedback control that are usually required for a continuous current mode (CCM) operation. These features enable good modulation performance with a MHz-class high-switching-frequency operation without difficulties owing to the very high switching frequency. This paper reports experimental demonstrations of the DCM grid-tied inverter using GaN- high-electron-mobility transistors (GaN-HEMT) with 1-MHz carrier frequency and three different filter components. Output current harmonics and losses are discussed, and it is indicated that chip inductors are promising for DCM-operated low-power inverters.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.139 No.3 （2019） 特集：半導体電力変換研究会

本誌掲載ページ: 249-257 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/139/3/139_249/_article/-char/ja/