Si-IGBTおよびGaN-FETインバータ励磁下のナノ結晶リングコアの鉄損特性

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2019/03/01

タイトル(英語): Iron Loss Properties of a Nanocrystalline Ring Core under Si-IGBT and GaN-FET Inverter Excitation

著者名: 八尾　惇（富山県立大学），杉本　昂也（豊田工業大学 電磁システム研究室），藤崎　敬介（豊田工業大学 電磁システム研究室）

著者名(英語): Atsushi Yao (Toyama Prefectural University), Takaya Sugimoto (Electromagnetic Energy System Lab., Toyota Technological Institute), Keisuke Fujisaki (Electromagnetic Energy System Lab., Toyota Technological Institute)

キーワード: ナノ結晶材料，鉄損，リングコア，リンギング　　nanocrystalline magnetic material，iron loss，ring core，ringing

要約(英語): We examine the iron loss properties of a nanocrystalline magnetic material (NMM) core excited by pulse width modulation (PWM) inverters with different semiconductors. We report the iron loss characteristics as a function of carrier frequency of the NMM ring core excited by two different inverters, which consist of a silicon-insulated gate bipolar transistor (Si-IGBT) and a gallium nitride-field effect transistor (GaN-FET). The iron losses of the NMM ring core under GaN-FET inverter excitation increase with the increase of carrier frequency owing to the ringing noises generated from the fast switching. However, the iron losses of the Si-IGBT-inverter-excited NMM ring core decrease slightly with increasing carrier frequency. We show that the iron loss properties of NMM ring core depend strongly on power semiconductor characteristics. In addition, to consider the ringing waveform in the NMM ring core by numerical simulations, we focus on a series RLC circuit model. We confirm that the numerical damped oscillation of the ringing calculated based on the series RLC circuit model is consistent with the experimental damped oscillation.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.139 No.3 （2019） 特集：半導体電力変換研究会

本誌掲載ページ: 276-283 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/139/3/139_276/_article/-char/ja/