商品情報にスキップ
1 1

Experimental Verification of the Large-Current Turn-off of Series-Connected IEGTs for Hybrid DC Circuit Breakers

Experimental Verification of the Large-Current Turn-off of Series-Connected IEGTs for Hybrid DC Circuit Breakers

通常価格 ¥770 JPY
通常価格 セール価格 ¥770 JPY
セール 売り切れ
税込

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門(英文)

発行日: 2020/05/01

タイトル(英語): Experimental Verification of the Large-Current Turn-off of Series-Connected IEGTs for Hybrid DC Circuit Breakers

著者名: Kazuyasu Takimoto (Infrastructure Systems Research and Development Center, Toshiba Infrastructure Systems & Solutions Corporation), Hiroshi Takenaka (Infrastructure Systems Research and Development Center, Toshiba Infrastructure Systems & Solutions Corpor

著者名(英語): Kazuyasu Takimoto (Infrastructure Systems Research and Development Center, Toshiba Infrastructure Systems & Solutions Corporation), Hiroshi Takenaka (Infrastructure Systems Research and Development Center, Toshiba Infrastructure Systems & Solutions Corporation), Toshiaki Matsumoto (Infrastructure Systems Research and Development Center, Toshiba Infrastructure Systems & Solutions Corporation), Takahiro Ishiguro (Power Electronics Systems Department, Toshiba Energy Systems & Solutions Corporation)

キーワード: HVDC,Hybrid DCCB,IEGT

要約(英語): This paper considers the application of series-connected press-pack Injection Enhanced Gate Transistors (IEGTs) as semiconductor breakers for hybrid DC circuit breakers (DCCBs) in multi-terminal HVDC transmission systems. In order to interrupt a large current equivalent to a fault current without parallel connection of a press-pack IEGT, a snubber circuit was applied. With the snubber circuit, surge voltages and switching losses can be reduced. In order to balance the voltages across each series-connected IEGT, their characteristics and circuit conditions should be similar, and the operation timings should be adjusted. The performance a prototype hybrid DCCB was evaluated. The semiconductor breaker of the hybrid DCCB prototype was composed of four series-connected IEGTs (4.5kV, 2.1kA) with the snubber circuit. The experimental results show that it successfully interrupted a current of 9.5kA. The peak voltage across the semiconductor breaker was 14.3kV. The variation in the voltage across each IEGT was less than 5%. This means that the peak voltage of each IEGT was suppressed to less than the withstand voltage of the IEGT.

本誌: IEEJ Journal of Industry Applications Vol.9 No.3 (2020) Special Issue on “SPC-Power Electronics and Its Applications”

本誌掲載ページ: 291-297 p

原稿種別: 論文/英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejjia/9/3/9_291/_article/-char/ja/

販売タイプ
書籍サイズ
ページ数
詳細を表示する