Experimental Verification of the Large-Current Turn-off of Series-Connected IEGTs for Hybrid DC Circuit Breakers
Experimental Verification of the Large-Current Turn-off of Series-Connected IEGTs for Hybrid DC Circuit Breakers
カテゴリ: 論文誌(論文単位)
グループ名: 【D】産業応用部門(英文)
発行日: 2020/05/01
タイトル(英語): Experimental Verification of the Large-Current Turn-off of Series-Connected IEGTs for Hybrid DC Circuit Breakers
著者名: Kazuyasu Takimoto (Infrastructure Systems Research and Development Center, Toshiba Infrastructure Systems & Solutions Corporation), Hiroshi Takenaka (Infrastructure Systems Research and Development Center, Toshiba Infrastructure Systems & Solutions Corpor
著者名(英語): Kazuyasu Takimoto (Infrastructure Systems Research and Development Center, Toshiba Infrastructure Systems & Solutions Corporation), Hiroshi Takenaka (Infrastructure Systems Research and Development Center, Toshiba Infrastructure Systems & Solutions Corporation), Toshiaki Matsumoto (Infrastructure Systems Research and Development Center, Toshiba Infrastructure Systems & Solutions Corporation), Takahiro Ishiguro (Power Electronics Systems Department, Toshiba Energy Systems & Solutions Corporation)
キーワード: HVDC,Hybrid DCCB,IEGT
要約(英語): This paper considers the application of series-connected press-pack Injection Enhanced Gate Transistors (IEGTs) as semiconductor breakers for hybrid DC circuit breakers (DCCBs) in multi-terminal HVDC transmission systems. In order to interrupt a large current equivalent to a fault current without parallel connection of a press-pack IEGT, a snubber circuit was applied. With the snubber circuit, surge voltages and switching losses can be reduced. In order to balance the voltages across each series-connected IEGT, their characteristics and circuit conditions should be similar, and the operation timings should be adjusted. The performance a prototype hybrid DCCB was evaluated. The semiconductor breaker of the hybrid DCCB prototype was composed of four series-connected IEGTs (4.5kV, 2.1kA) with the snubber circuit. The experimental results show that it successfully interrupted a current of 9.5kA. The peak voltage across the semiconductor breaker was 14.3kV. The variation in the voltage across each IEGT was less than 5%. This means that the peak voltage of each IEGT was suppressed to less than the withstand voltage of the IEGT.
本誌掲載ページ: 291-297 p
原稿種別: 論文/英語
電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejjia/9/3/9_291/_article/-char/ja/
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