Effect of Negative Gate Voltage on the Turn-off Performance of Si-IGBT Device

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門（英文）

発行日: 2020/09/01

タイトル(英語): Effect of Negative Gate Voltage on the Turn-off Performance of Si-IGBT Device

著者名: Fumio Yukawa (Fuji Electric Co., Ltd.), Taku Takaku (Fuji Electric Co., Ltd.), Koji Yano (University of Yamanashi)

著者名(英語): Fumio Yukawa (Fuji Electric Co., Ltd.), Taku Takaku (Fuji Electric Co., Ltd.), Koji Yano (University of Yamanashi)

キーワード: IGBT，turn-off，negative gate voltage，dv/dt，correction factor

要約(英語): In this study, the impact of negative gate voltage (VG(off)) on the turn-off performance of Si-IGBT device is investigated. In general, the switching energies of the IGBT devices are given at specific VG(off) =-15V. When estimating the power dissipation of the inverter system at different VG(off), a correction factor of the switching energies from the given values is required. Although it is known that the value of VG(off) affects the turn-off switching characteristic, it has not been investigated in detail. Hence, it is difficult to theoretically estimate the correction factor for the turn-off energy (Eoff) for different VG(off) and gate resistance (RG). The effect of VGE(off) on the behavior of collector-emitter voltage (VCE) during the turn-off operation of the IGBT is investigated. The estimation method of Eoff at different VG(off) and RG is derived from the investigation and theoretical formula confirmed by the experimental results. Then, a novel procedure to estimate the Eoff correction factor under different gate drive conditions is proposed.

本誌: IEEJ Journal of Industry Applications Vol.9 No.5 （2020）

本誌掲載ページ: 557-562 p

原稿種別: 論文／英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejjia/9/5/9_557/_article/-char/ja/