パワエレ用高性能SiC融合逆導通デバイスの開発

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2020/12/01

タイトル(英語): Development of SiC Merged Reverse Conductive Devices

著者名: 菅原　良孝（SiCパワーエレクトロニクスネットワーク：Spen）

著者名(英語): Yoshitaka Sugawara (SiC Power Electoronics Network (Spen))

キーワード: SiC MRCデバイス，SiC pnダイオード，SiC MRC-MOSFET，SiC MRC-IGBT，SiCインバータ，TEDREC　　SiC MRC-device，SiC pn diode，SiC MRC-MOSFET，SiC MRC-IGBT，SiC-Inverter，TEDREC

要約(英語): SiC merged reverse conductive (MRC) power devices composed of both unipolar devices and bipolar devices have been developed to achieve a smaller chip size, a lower power loss and a higher reliability. SiC MRC power devices such as SiC MRC-MOSFET and SiC MRC-IGBT can achieve this performance, but have the problems of on-voltage degradation and a large snap-back voltage. The former has been solved by the newly developed majority carrier heating-TEDREC (MaCH-TEDREC) method and the latter has been solved by both the newly developed double buffer device structure and novel standard cells with pilot IGBT.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.140 No.12 （2020）

本誌掲載ページ: 972-982 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/140/12/140_972/_article/-char/ja/