半導体素子の配線インダクタンスを用いた電流検出回路を応用したSiC-MOSFETのデッドタイムレス制御技術の基礎検討

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2021/07/01

タイトル(英語): Basic Study of Dead-Timeless Control Technology for SiC-MOSFET Applying Current Detection Circuit Using Wiring Inductance of Semiconductor Device

著者名: 二瓶　颯斗（日立Astemo（株）），長洲　正浩（茨城工業高等専門学校），秋山　悟（（株）日立製作所研究開発グループ），石川　勝美（（株）日立製作所 鉄道ビジネスユニット）

著者名(英語): Hayato Nihei (Hitachi Astemo, Ltd.), Masahiro Nagasu (National Institute of Technology, Ibaraki College), Satoru Akiyama (Hitachi, Ltd. Research & Development Group), Katsumi Ishikawa (Hitachi, Ltd. Railway System Business Unit)

キーワード: 同期整流，デッドタイム，電流検出，SiC-MOSFET　　synchronous rectification，dead time，current detection，SiC-MOSFET

要約(英語): MOSFETs generally have excellent switching characteristics, and their switching losses can be reduced by synchronous rectification. Furthermore, using the body diode of MOSFET, it is possible to remove any external freewheeling diodes. However, the body diode of a SiC-MOSFET has two major problems: the on-state voltage of the body diode is high, and a reverse recovery current occurs. These problems are appeared by the current flowing through the body diode during the dead time of synchronous rectification. To prevent these problems, we propose a synchronous rectification scheme with substantial zero dead time control. In this type of control, we apply a circuit to detect current by integrating the voltage generated in the wiring inductance of the semiconductor device. A short-circuit current flows by substantially eliminating the dead time, but it is limited by providing a period of suppressed gate voltage. In this paper, we present the principle of this scheme, measurement results of the loss when the MOSFET is turned-on/off, and control parameters. Using this scheme, it was confirmed that the loss when the MOSFET is turned-on/off could be reduced.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.141 No.7 （2021）

本誌掲載ページ: 532-541 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/141/7/141_532/_article/-char/ja/