外部キャパシタンスがIGBTのターンオフ損失へ与える影響

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2021/10/01

タイトル(英語): Effect of External Gate-Emitter Capacitance on Turn-Off Loss of IGBT Devices

著者名: 湯川　文夫（富士電機（株）），坂井　琢磨（富士電機（株）），宮下　秀仁（富士電機（株）），大月　正人（富士電機（株）），矢野　浩司（山梨大学）

著者名(英語): Fumio Yukawa (Fuji Electric Co., Ltd.), Takuma Sakai (Fuji Electric Co., Ltd.), Shuji Miyashita (Fuji Electric Co., Ltd.), Masahito Otsuki (Fuji Electric Co., Ltd.), Koji Yano (University of Yamanashi)

キーワード: IGBT，ターンオフ，外部キャパシタンス，CGE，Eoff IGBT，turn-off，external gate-emitter capacitance，CGE，Eoff

要約(英語): Although an external gate-emitter capacitance (CGE(ext)) has been proposed to reduce the turn-on loss of insulated-gate bipolar transistors (IGBTs), its effect on the turn-off loss (Eoff) has not been investigated in detail. In this study, the effect of CGE(ext) on Eoff in an IGBT was investigated. In the case of a relatively low gate resistance (RG), CGE(ext) does not affect Eoff; thus, the turn-off behavior is independent of CGE(ext) and RG. In contrast, in the case of a relatively high RG, CGE(ext) affects Eoff. When CGE(ext) is connected to the input terminal of an IGBT, the dVCE/dt decreases owing to the increase in the effective gate charge (QG) due to the addition of CGE(ext), thereby increasing the value of Eoff.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.141 No.10 （2021）

本誌掲載ページ: 846-847 p

原稿種別: 研究開発レター／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/141/10/141_846/_article/-char/ja/