RC-IGBT非動作領域の冷却効果による熱抵抗の改善

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2021/11/01

タイトル(英語): Improvement of Thermal Resistance by Cooling Effect of RC-IGBT Non-operative Region

著者名: 仲野　逸人（富士電機（株）），村中　司（国立大学法人 山梨大学），鍋谷　暢一（国立大学法人 山梨大学）

著者名(英語): Hayato Nakano (Fuji Electric Co., Ltd.), Tsutomu Muranaka (University of Yamanashi), Yoichi Nabetani (University of Yamanashi)

キーワード: パワーモジュール，RC-IGBT，チップ熱抵抗，熱抵抗シミュレーション　　power module，RC-IGBT，chip thermal resistance，thermal resistance simulation

要約(英語): This paper describes an accurate chip thermal resistance (Rth) estimation method by the cooling effect of Reverse Conduction Insulated Gate Bipolar Transistor (RC-IGBT). The cooling effect achieved using the non-operational region of the RC-IGBT allows to estimation of the chip Rth when the IGBT and FWD (Free Wheel Diode) regions are by periodically on the device and used as the lead frame structure. A chip Rth estimation accuracy is improved by 15% compared with the conventional method. Additionally, the RC-IGBT has a 60% lower chip Rth compared with conventional IGBT or FWD. It is noted that the ratio of the FWD and IGBT regions of the RC-IGBT should be 0.26 : 1 enable optimization of the RC-IGBT of each Rth simultaneously.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.141 No.11 （2021）

本誌掲載ページ: 889-894 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/141/11/141_889/_article/-char/ja/