SJ-MOSFETの容量特性に着目したスイッチングノイズメカニズム分析と対策法の提案

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2022/10/01

タイトル(英語): Analysis of Switching Noise Mechanism and Proposal of Improvement Measures Focused on Capacitance-Voltage Characteristics of Superjunction-MOSFET

著者名: 安住　壮紀（（株）東芝 生産技術センター），山下　浩明（東芝デバイス&ストレージ（株）），溝口　健（東芝デバイス&ストレージ（株））

著者名(英語): Takenori Yasuzumi (Corporate Manufactring Engineering Center, Toshiba Corporation), Hiroaki Yamashita (Toshiba Electronic Devices & Storage Corporation), Takeshi Mizoguchi (Toshiba Electronic Devices & Storage Corporation)

キーワード: スーパージャンクションMOSFET，放射EMI，スイッチング，C-V特性_x000D_　　superjunction-MOSFET，radiated EMI，switching，C-V characteristics

要約(英語): The switching noise mechanism of a high voltage superjunction-MOSFET loaded into a power supply is analyzed. The device model is developed using BSIM3 MOSFET model with voltage-dependent capacitors. Inductive load switching with test-circuit parasitic elements is simulated, and the switching surge generated during turn-off transient is discussed. A sharp drop of drain-source capacitance (Cds at the turn-off transient causes high voltage ringing, whose frequency is determined using total capacitances and stray inductances in the power loop circuit. The optimization of Cds-voltage characteristic and additional Cgs with small capacitance are proposed as an effective method for suppressing surge generation. The voltage ringing level is improved by slightly modifying the Cds-voltage curve and additional Cgs. In addition, test results show that the radiated EMI decreased.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.142 No.10 （2022）

本誌掲載ページ: 721-728 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/142/10/142_721/_article/-char/ja/