短絡動作時のIGBT回路シミュレーションの高精度化

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2022/12/01

タイトル(英語): Circuit Simulation Method for Insulated-Gate Bipolar Transistor Short-Circuit Operation with High Accuracy

著者名: 小澤　貴也（（株）デンソー），山本　貴生（（株）デンソー），杉浦　寛人（（株）デンソー），近藤　陽介（（株）デンソー）

著者名(英語): Takaya Ozawa (DENSO CORPORATION), Takao Yamamoto (DENSO CORPORATION), Hiroto Sugiura (DENSO CORPORATION), Yosuke Kondo (DENSO CORPORATION)

キーワード: 短絡，回路シミュレーション，SPICE，IGBT，飽和電流，過渡熱抵抗_x000D_　　short circuit，circuit simulation，SPICE，IGBT，saturation current，transient thermal resistance

要約(英語): In this paper, we propose a novel method to improve the circuit simulation accuracy of insulated-gate bipolar transistor (IGBT) power devices under a short-circuit state. To determine the IGBT junction temperature, the transient thermal resistance of an IGBT device on the order of micro seconds is estimated by transient thermal simulations. The saturation current without self-heating effects is estimated based on a short-circuit test and the transient thermal resistance. The IGBT SPICE parameter is extracted from the saturation current characteristics during the short-circuit state. The coupled electrical-thermal simulations with the SPICE model and thermal resistance model are applied to several short-circuit evaluations with different parasitic impedance and gate driving condition, and the results are consistent with the measured current and voltage waveforms.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.142 No.12 （2022） 特集：レジリエントな社会を実現するスマートファシリティ関連技術

本誌掲載ページ: 954-960 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/142/12/142_954/_article/-char/ja/