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Improvement of Efficiency in Bidirectional DC-DC Converter with Dual Active Bridge Using GaN-HEMT

Improvement of Efficiency in Bidirectional DC-DC Converter with Dual Active Bridge Using GaN-HEMT

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カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門(英文)

発行日: 2023/05/01

タイトル(英語): Improvement of Efficiency in Bidirectional DC-DC Converter with Dual Active Bridge Using GaN-HEMT

著者名: Ryuji Yamada (Fuji Electric Co., Ltd.), Akihiro Hino (Fuji Electric Co., Ltd.), Keiji Wada (Tokyo Metropolitan University)

著者名(英語): Ryuji Yamada (Fuji Electric Co., Ltd.), Akihiro Hino (Fuji Electric Co., Ltd.), Keiji Wada (Tokyo Metropolitan University)

キーワード: dual active bridge,efficiency,LLC resonant converter

要約(英語): A prototype bidirectional isolated DC-DC converter with an output of 3.6 kW, using GaN-HEMTs, employing a planar transformer and operating at a maximum frequency of 400kHz, was developed and evaluated. Typical circuits for bidirectional isolated DC-DC converters are the LLC resonant converter and the dual active bridge (DAB), both of which have the disadvantage of low efficiency at light loads. In this paper, GaN-HEMTs were used as a rectifier device to reduce DAB losses with natural commutation under light loads, utilizing their no reverse recovery loss characteristics. Zero-voltage switching was achieved using the transformer excitation current as a lagging phase current on the input side. As a result of the efficiency comparison between the LLC resonant converter and DAB under the same components and input/output conditions, higher efficiency was obtained in DAB under most conditions. The maximum efficiency was 98.6%.

本誌: IEEJ Journal of Industry Applications Vol.12 No.3 (2023) Special Issue on “IPEC-Himeji 2022”

本誌掲載ページ: 264-272 p

原稿種別: 論文/英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejjia/12/3/12_22006373/_article/-char/ja/

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