High Bandwidth Active Gate Driver for Simultaneous Reduction of Switching Surge and Switching Loss of SiC-MOSFET

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門（英文）

発行日: 2023/05/01

タイトル(英語): High Bandwidth Active Gate Driver for Simultaneous Reduction of Switching Surge and Switching Loss of SiC-MOSFET

著者名: Yuichi Noge (Faculty of Information Science and Electrical Engineering, Kyushu University), Masahito Shoyama (Faculty of Information Science and Electrical Engineering, Kyushu University)

著者名(英語): Yuichi Noge (Faculty of Information Science and Electrical Engineering, Kyushu University), Masahito Shoyama (Faculty of Information Science and Electrical Engineering, Kyushu University)

キーワード: double pulse test，gate drive，SiC MOSFET，switching loss

要約(英語): This study investigates an active gate driver (AGD) for an SiC-MOSFET. The source current feedback type AGD utilizes the induced voltage of the source wire inductance as a negative feedback signal to regulate the source current di/dt. Recent improvements in the switching performance of the AGD is limited due to the feedback system bandwidth. In this paper, a high bandwidth current feedback type power operational amplifier is applied as the gate drive circuit. Switching characteristics of the conventional resistive gate driver and AGD are experimentally investigated via a double pulse test setup. The switching setup condition is 700V/80A. This paper describes the development of the AGD circuit and experimental results. The over-shoot and ringing of the Vds and Is are reduced using the AGD. Moreover, the switching loss is simultaneously reduced.

本誌: IEEJ Journal of Industry Applications Vol.12 No.3 （2023） Special Issue on “IPEC-Himeji 2022”

本誌掲載ページ: 384-391 p

原稿種別: 論文／英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejjia/12/3/12_22007696/_article/-char/ja/