Estimation of Both Junction Temperature and Load Current of IGBTs from Output Voltage of Gate Driver

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門（英文）

発行日: 2023/05/01

タイトル(英語): Estimation of Both Junction Temperature and Load Current of IGBTs from Output Voltage of Gate Driver

著者名: Hiromu Yamasaki (The University of Tokyo), Katsuhiro Hata (The University of Tokyo), Makoto Takamiya (The University of Tokyo)

著者名(英語): Hiromu Yamasaki (The University of Tokyo), Katsuhiro Hata (The University of Tokyo), Makoto Takamiya (The University of Tokyo)

キーワード: digital gate driver，IGBT，junction temperature，load current，estimation

要約(英語): For the online condition monitoring of IGBTs, a new estimation method of both the junction temperature (TJ) and the load current (IL) of IGBTs using a momentary high-Z gate driving (MHZGD) from the output voltage (VOUT) of the gate driver is proposed, which can be integrated into the gate driver ICs. TJ is estimated from VOUT difference during and after the MHZGD period, and IL is estimated from VOUT during MHZGD. In the 110 switching measurements at 11 different TJ's from 25℃ to 125℃ and 10 different IL's from 12.5A to 80A for each of the three IGBTs,TJ and IL estimation errors in a low test cost parameter determination method are +4.9℃/-8.4℃ and +1.1 A/-4.3 A, respectively. In contrast,TJ and IL estimation errors in a parameter determination method with small error are +4.9℃/-8.1℃ and +1.0A/-1.8A, respectively.

本誌: IEEJ Journal of Industry Applications Vol.12 No.3 （2023） Special Issue on “IPEC-Himeji 2022”

本誌掲載ページ: 392-400 p

原稿種別: 論文／英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejjia/12/3/12_22007728/_article/-char/ja/