GaN-FETインバータ励磁下における高周波電磁気リンギング現象の解明

カテゴリ: 論文誌(論文単位)

グループ名: 【D】産業応用部門

発行日: 2024/01/01

タイトル(英語): Analysis of High-frequency Electromagnetic Ringing Phenomenon under GaN-FET Inverter Excitation

著者名: 荻島　規宏（豊田工業大学），グエン ザー ミン　タオ（島根大学），藤﨑　敬介（豊田工業大学）

著者名(英語): Norihiro Ogishima (Toyota Technological Institute), Nguyen Gia Minh Thao (Shimane University), Keisuke Fujisaki (Toyota Technological Institute)

キーワード: GaN-FET，Si-IGBT，インバータ励磁，リンギング現象，負荷共振，立ち上がり時間　　GaN-FET，Si-IGBT，inverter excitation，ringing phenomenon，load resonance，rising time

要約(英語): In this study, the ringing phenomenon of gallium nitride-field effect transistor (GaN-FET) and silicon-insulated gate bipolar transistor (Si-IGBT) inverter excitations in a ring sample was thoroughly measured and analyzed by using a high-quality oscilloscope with a very high sampling rate of 5 giga-samples per second (GS/s). Owing to the rapid switching of the GaN-FET power devices in several nanoseconds and the ringing frequencies in the MHz range, the use of the high sampling rate of 5GS/s is necessary and useful for accurate measurement. The experimental findings and analysis reveal the following three key points: i) there are two possible types of high-frequency resonance phenomena, i.e., the first one caused by semiconductor devices and circuits and the other generated by the resonance with loads in use. ii) The ringing phenomenon because of the resonance under the load is considered to be due to the rising time of pulses that are caused by the rapid switching of the semiconductor devices. iii) The ability to measure and the two types of ringing phenomena depends on the intensity of the white noise of the measuring instrument.

本誌: 電気学会論文誌D（産業応用部門誌） Vol.144 No.1 （2024）

本誌掲載ページ: 1-7 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejias/144/1/144_1/_article/-char/ja/