電磁駆動型2軸可動MEMS グレーティングと近赤外低コヒーレンス干渉法を用いた3次元形状計測への応用
電磁駆動型2軸可動MEMS グレーティングと近赤外低コヒーレンス干渉法を用いた3次元形状計測への応用
カテゴリ: 論文誌(論文単位)
グループ名: 【E】センサ・マイクロマシン部門
発行日: 2012/02/01
タイトル(英語): Electromagnetically Dual-axis Driven MEMS Grating, and its Application to 3D Profiling with Near Infrared Low Coherence Interferometry
著者名: 渡部 善幸(山形県工業技術センター),高橋 義行(山形県工業技術センター),阿部 泰(山形県工業技術センター),岩松新之輔(山形県工業技術センター),矢作 徹(山形県工業技術センター),小林 誠也(山形県工業技術センター),今野 俊介(山形県工業技術センター),佐藤 敏幸(山形県工業技術センター)
著者名(英語): Yoshiyuki Watanabe (Yamagata Research Institute of Technology), Yoshiyuki Takahashi (Yamagata Research Institute of Technology), Yutaka Abe (Yamagata Research Institute of Technology), Shinnosuke Iwamatsu (Yamagata Research Institute of Technology), Toru Yahagi (Yamagata Research Institute of Technology), Seiya Kobayashi (Yamagata Research Institute of Technology), Shunsuke Konno (Yamagata Research Institute of Technology), Toshiyuki Sato (Yamagata Research Institute of Technology)
キーワード: 近赤外分光,電磁駆動,MEMS グレーティング,低コヒーレンス干渉,3次元形状計測 Near infrared spectroscopy,Electromagnetic driving,MEMS-grating,Low coherence interferometry,3D profiling
要約(英語): We have investigated 3D profiling of the objects by low coherence optical interferometer using MEMS grating. This system, constructed with optical fibers and MEMS devices, is Fourier domain interferometer, which can discriminate distance to the object by wavelength analysis of the interference spectra. A MEMS mirror gives the object 2D optical scanning, and a MEMS grating makes spectroscopy of interference spectra. The MEMS grating can tilt to dual-axis with electromagnetic force induced by planer coils and a permanent magnet. One axis tilting works as near infrared spectroscopy, and another axis tilting works as optical axis alignment in an interferometer. Fabricated MEMS grating could tilt ±3.5° (mech.) / less than ±10mA in both direction at low frequency, which were equivalent to approximately 1400-1700nm in wavelength. This interferometer, whose S/N was 50dB and vertical standard deviation was 0.6μm, could scan full wavelength width (1400-1700nm) in 25ms. Finally, we could realize 3D profiling which was not only surface reflection profiling of 1µm step, but also transparent profiling of IC process layer from backside of the wafer.
本誌: 電気学会論文誌E(センサ・マイクロマシン部門誌) Vol.132 No.2 (2012) 特集:第28 回「センサ・マイクロマシンと応用システム」シンポジウム受賞論文特集
本誌掲載ページ: 31-36 p
原稿種別: 論文/日本語
電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/132/2/132_2_31/_article/-char/ja/
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