化学溶液塗布法による誘電体薄膜の高均質化とウェハレベル成膜

カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2013/07/01

タイトル(英語): Homogenizing Dielectric Film using Chemical Solution Deposition Method and Application to Wafer Level Film Preparation

著者名: 末重　良宝（東京大学），一木　正聡（独立行政法人産業技術総合研究所／JST-さきがけ），須賀　唯知（東京大学），伊藤　寿浩（独立行政法人産業技術総合研究所）

著者名(英語): Kazutaka Sueshige (The University of Tokyo), Masaaki Ichiki (National Institute of Advanced Industrial Science and Technology/JST-PRESTO), Tadatomo Suga (The University of Tokyo), Toshihiro Itoh (National Institute of Advanced Industrial Science and Technology)

キーワード: 誘電体，チタン酸ジルコン酸鉛，化学溶液塗布法，実験計画法，ウェハレベル成膜　　Dielectric，PZT，Chemical solution deposition，Design of experiments，Wafer level film preparation

要約(英語): It is difficult to prepare homogeneous dielectric film on the large wafer. Chemical solution deposition method is useful for wafer level film preparation because large area film can be easily obtained. However, this method has many process parameters and their optimization is very hard. We therefore introduce a statistical method to reduce the optimization process. Crystallization temperature was clarified to be the most important factor among our selected parameters for high quality dielectric films in our previous study. We investigated more precisely the process parameters that familiar with the temperature based on the usage of larger orthogonal array. The results showed that the precursor formation temperature is the most important factor for high permittivity films. We next prepared the dielectric film on the 4-inch wafer under the optimum conditions for both high orientation and high electrical properties. We successfully formed the film with good properties and (100) preferred orientation as a result. These results will be useful for fabricating MEMS devices and integration technology of electrical devices such as capacitors in wafer level fabrication.

本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.133 No.7 （2013）

本誌掲載ページ: 303-308 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/133/7/133_303/_article/-char/ja/