Photolithography for Minimal Fab System
Photolithography for Minimal Fab System
カテゴリ: 論文誌(論文単位)
グループ名: 【E】センサ・マイクロマシン部門
発行日: 2013/09/01
タイトル(英語): Photolithography for Minimal Fab System
著者名: Sommawan Khumpuang (Nanoelectronics Research Institute, AIST), Hitoshi Maekawa (Nanoelectronics Research Institute, AIST), Shiro Hara (Nanoelectronics Research Institute, AIST)
著者名(英語): Sommawan Khumpuang (Nanoelectronics Research Institute, AIST), Hitoshi Maekawa (Nanoelectronics Research Institute, AIST), Shiro Hara (Nanoelectronics Research Institute, AIST)
キーワード: Minimal Fab System,clean room free,photolithography,edge bead removal
要約(英語): Minimal Fab System Photolithography has been developed for wafer patterning process without the requirement of a cleanroom. It consists of minimal resist coater, minimal maskless UV exposure, minimal mask aligner and minimal resist developer. We have proved in practice that the spin coating using minimal resist coater for a 0.5-inch wafer gives the identical result of resist thickness compared with 4-inch wafers without changes to a higher rotational speed. The minimal maskless UV exposure using Digital Light Processing (DLP) confirms that only one LED light source with the light intensity of 150 mW/cm2 can expose over a 0.5-inch wafer in a few minutes. The minimal mask aligner is developed for a high speed exposure within 5-20 seconds. The aligner also uses a LED light source that can produce the light intensity of 14 mW/cm2. The present photoresist resolution for the maskless UV exposure and the mask aligner are 1 μm and 2 μm, respectively. The minimal developer has minimized its consumption of developing agents. Due to the surface tension, a volume of developing agent is kept on the wafer surface for slowly spinning to stimulate the developing process. The developing time is 20% saved from that of the conventional puddle development.
本誌: 電気学会論文誌E(センサ・マイクロマシン部門誌) Vol.133 No.9 (2013) 特集:マイクロエネルギーハーベスティング
本誌掲載ページ: 272-277 p
原稿種別: 論文/英語
電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/133/9/133_272/_article/-char/ja/
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