側面給電方法による電解めっき構造体形成プロセス

カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2014/02/01

タイトル(英語): A Method of Fabricating Electroplated Structures using Side-wall Electrical Contact

著者名: 青野　宇紀（（株）日立製作所 日立研究所），吉村　保廣（（株）日立製作所 日立研究所），中山　義則（（株）日立製作所 中央研究所），金丸　昌敏（（株）日立製作所 日立研究所）

著者名(英語): Takanori Aono (Hitachi, Ltd., Hitachi Research Laboratory), Yasuhiro Yoshimura (Hitachi, Ltd., Hitachi Research Laboratory), Yoshinori Nakayama (Hitachi, Ltd., Central Research Laboratory), Masatoshi Kanamaru (Hitachi, Ltd., Hitachi Research Laboratory)

キーワード: 電解めっき，リフトオフ，アルミニウム，両性元素，犠牲層，異常エッチング　　Electroplating，Lift-off，Aluminium，Amphoteric element，Sacrifice layer，Abnormal etching

要約(英語): A method for fabricating electroplated structures using side wall electrical contact has been developed. This method consists of three key processes: first, a lift-off process using an aluminum sacrifice layer; second, an electroplating process using side wall electrical contact between the aluminum sacrifice layer and the metal layer; and third, a conductive layer removal process, which prevents abnormal etching due to a local cell effect of the metal layers. In the lift-off process, a roof shaped pattern is fabricated by side-etching an aluminum layer. It is easy to remove the metal layer and the resist. In the electroplating process, the resistance of the electrical contact in the side-wall between the aluminum sacrifice layer and the metal layer is nearly equal to that of a conventional seed layer and can be applied as a feed line. In the conductive layer removal process, the aluminum sacrifice layer is an amphoteric, and can be removed with a dilute alkali solution. With this method, abnormal etching of the electroplated structure and the metal layer does not occur.

本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.134 No.2 （2014）

本誌掲載ページ: 20-25 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/134/2/134_20/_article/-char/ja/