表面活性化法を用いたCu/Cu直接接合における接合強度に及ぼす接合荷重の影響

カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2014/09/01

タイトル(英語): Effect of Bonding Pressure on the Strength of Cu/Cu Direct Bonding by Surface Activated Method

著者名: 内海　淳（三菱重工業（株） 先進技術研究センター／横浜国立大学大学院工学府 物理情報工学専攻），一柳　優子（横浜国立大学大学院工学府 物理情報工学専攻）

著者名(英語): Jun Utsumi (Advanced Technology Research Center, Mitsubishi Heavy Industries, Ltd./Graduate School of Engineering, Yokohama National University), Yuko Ichiyanagi (Graduate School of Engineering, Yokohama National University)

キーワード: 表面活性化接合法，常温接合，Cu膜，表面粗さ，引張強度，Arイオンビーム　　surface activated bonding method，room temperature bonding，Cu film，surface roughness，tensile strength，Ar ion beam

要約(英語): We studied Cu-Cu direct bonding for the application of 3D integration. Thin Cu film deposited specimens are bonded under high vacuum by surface activated bonding method at room temperature. In the room-temperature direct bonding process, surface roughness has a strong influence on bonding. In general, metal bonding needs high bonding pressure. For successful bonding, it is important to reveal the influence of surface roughness and bonding pressure on the bonding properties. Therefore, we investigated the relationship between surface roughness and bonding strength with bonding pressure as the parameter. The specimen with smaller surface roughness than 1nm Ra was successfully bonded by bonding pressure of 10MPa, but for bigger roughness than 1nm Ra the successful bonding needed pressure of 50MPa.

本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.134 No.9 （2014）

本誌掲載ページ: 284-289 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/134/9/134_284/_article/-char/ja/