薄膜間の剥離エネルギー差を利用した多層配線構造体の加工プロセス

カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2015/01/01

タイトル(英語): Method for Fabricating Multilevel Interconnection Structures using Differential Delamination Energies between Metal and Silicon Oxide Thin Films

著者名: 青野　宇紀（（株）日立製作所 日立研究所），岩崎　富生（（株）日立製作所 日立研究所），吉村　保廣（（株）日立製作所 日立研究所），中山　義則（（株）日立製作所 中央研究所）

著者名(英語): Takanori Aono (Hitachi, Ltd., Hitachi Research Laboratory), Tomio Iwasaki (Hitachi, Ltd., Hitachi Research Laboratory), Yasuhiro Yoshimura (Hitachi, Ltd., Hitachi Research Laboratory), Yoshinori Nakayama (Hitachi, Ltd., Central Research Laboratory)

キーワード: 多層配線構造体，剥離エネルギー，分子動力学　　Multilevel interconnection structure，Delamination energy，Molecular dynamics simulation

要約(英語): A method for fabricating multilevel interconnection structures using differential delamination energies (adhesion strength) between metal and silicon oxide thin films has been developed. When the selectivity of the delamination energies between the metal and the silicon oxide thin films sets on the wiring, the silicon oxide thin film can be released on the low delaminaion energy area and can be held on the high delamination energy area by using ultrasonic waves. The delamination energies are calculated by using a molecular dynamics simulation. The delamination energies between chromium, titanium, and nickel and silicon oxide thin films are larger than those of copper and gold thin films. The chromium, titanium, and nickel are applied as an adhesion layer with silicon oxide, and the copper and gold are applied as a release layer from silicon oxide. The results are applied to the process for fabricating the multilevel interconnection structures, and the release and the adhesive areas of silicon oxide thin film can be fabricated on the wiring by adding ultrasonic waves. With this method, the lower wrings and the contact areas of the multilevel interconnection structures can be easily fabricated.

本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.135 No.1 （2015） 特集：環境センサおよびその監視技術

本誌掲載ページ: 32-39 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/135/1/135_32/_article/-char/ja/