Digitally Tuned RF-MEMS Varactors Implemented in an 800-MHz Low Phase Noise VCO

カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2016/03/01

タイトル(英語): Digitally Tuned RF-MEMS Varactors Implemented in an 800-MHz Low Phase Noise VCO

著者名: Kenichiro Urayama (Japan Radio Corporation), Koichiro Akahori (Japan Radio Corporation), Nobuyuki Adachi (Japan Radio Corporation), Hiroyuki Fujita (Institute of Industrial Science, The University of Tokyo), Hiroshi Toshiyoshi (Research Center for Advance

著者名(英語): Kenichiro Urayama (Japan Radio Corporation), Koichiro Akahori (Japan Radio Corporation), Nobuyuki Adachi (Japan Radio Corporation), Hiroyuki Fujita (Institute of Industrial Science, The University of Tokyo), Hiroshi Toshiyoshi (Research Center for Advanced Science and Technology, The University of Tokyo)

キーワード: electrostatic，microactuators，RF-MEMS，surface micromachining，varactors，VCO

要約(英語): This paper reports on the design, fabrication, and measurement results of a voltage controlled oscillator (VCO) in the 800-MHz band that uses LC (inductor and capacitor) resonance controlled by a newly developed radio frequency microelectromechanical systems (RF-MEMS) varactor. In the system, a pair of metal-insulator-metal (MIM) capacitors is integrated with an electrostatic actuator made of an electroplated gold layer over a TEMPAXTM substrate. We used an insulator hinge made of Parylene-C for the first time to electrically isolate the switch contact from the electrostatic actuator body, thereby allowing an option to form a series of MIM capacitors. A packaged 2-bit MEMS varactor is operated at 35 Vdc to digitally control the capacitor values in four different states between 0.70 pF and 0.86 pF with a 0.05-pF-step at 1 GHz. A high-Q factor (electrical) of 60 is experimentally confirmed at 1 GHz with the MEMS varactor tuned to 0.86-pF. The VCO circuit was developed using the packaged 2-bit MEMS varactors and surface-mounted devices (SMDs) on a low-loss printed circuit board (PCB), and its free-running frequency controlled between 802 MHz and 822 MHz. It exhibited a low phase noise of -101 dBc/Hz at a 10 kHz offset from the carrier frequency.

本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.136 No.3 （2016） 特集：センサ・マイクロマシン英文特集号

本誌掲載ページ: 44-54 p

原稿種別: 論文／英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/136/3/136_44/_article/-char/ja/