Outline Fine Pattern Generation Using Partial UV Curing of Photoresist
Outline Fine Pattern Generation Using Partial UV Curing of Photoresist
カテゴリ: 論文誌(論文単位)
グループ名: 【E】センサ・マイクロマシン部門
発行日: 2017/01/01
タイトル(英語): Outline Fine Pattern Generation Using Partial UV Curing of Photoresist
著者名: Takuya Iwamoto (Department of Advanced Science and Technology, Toyota Technological Institute), Shinya Kumagai (Department of Advanced Science and Technology, Toyota Technological Institute), Minoru Sasaki (Department of Advanced Science and Technology, T
著者名(英語): Takuya Iwamoto (Department of Advanced Science and Technology, Toyota Technological Institute), Shinya Kumagai (Department of Advanced Science and Technology, Toyota Technological Institute), Minoru Sasaki (Department of Advanced Science and Technology, Toyota Technological Institute)
キーワード: UV curing,Shadowing effect,Sidewall,Outline fine pattern
要約(英語): UV curing makes photoresists inactive to additional UV exposure and is applied to generate a fine outline pattern from a wider original mask pattern. Using the standard g-line photoresist, a roughly 1-μm-wide pattern is produced. The final pattern is a UV-cured photoresist that does not remain on the other material, suggesting few limitations on applications.
本誌: 電気学会論文誌E(センサ・マイクロマシン部門誌) Vol.137 No.1 (2017) 特集:センサ・マイクロマシン英文特集号
本誌掲載ページ: 44-45 p
原稿種別: 研究開発レター/英語
電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/137/1/137_44/_article/-char/ja/
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