Au/Siナノアンテナを用いた近赤外光シリコン光検出器

カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2017/11/01

タイトル(英語): Near-Infrared Si Based Photodetector Using Au/Si Nano-Antenna Structures

著者名: 安食　嘉晴（（一財）マイクロマシンセンター），菅　哲朗（電気通信大学情報理工学研究科）

著者名(英語): Yoshiharu Ajiki (Micromachine Center), Tetsuo Kan (Graduate School of Informatics and Engineering, The University of Electro-Communications)

キーワード: 近赤外光ディテクタ，シリコン，ナノアンテナ，プラズモン　　Near-Infrared Photodetector，Silicon，Nano-Antenna，Plasmon

要約(英語): We developed a near-infrared photodetector using nano-pillars formed on an n-typed Si wafer. Au nano-pillars performed as optical antennas, which absorb the infrared light effectively. Each nano-pillar had several hundreds nm of diameter, 1.0-μm-height, and was arrayed with 2-μm-pitch over 100 μm ×100 μm area, fabricated using a MEMS 8-inch line. The absorbed photo energy was transduced to photocurrent by a Schottky barrier formed at the interface between the Au/Cr and n-typed Si. The photocurrent sensitivity (responsivity) of the nano-pillar photodetector exhibited around 10-times increase in average, and 23-times in the maximum, compared with a control Schottky typed photodetector with a flat Au surface. The detectable wavelength limit was extended to 1.8 μm. Because this method was clarified to be compatible with a standard Si fabrication process, it will serve as a fundamental way to construct a photodetector for multi-wavelength photodetection.

本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.137 No.11 （2017） 特集：メタマテリアル・プラズモニクス

本誌掲載ページ: 387-392 p

原稿種別: 論文／日本語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/137/11/137_387/_article/-char/ja/