磁性薄膜の磁気歪みを利用した歪み・振動センサの開発
磁性薄膜の磁気歪みを利用した歪み・振動センサの開発
カテゴリ: 論文誌(論文単位)
グループ名: 【E】センサ・マイクロマシン部門
発行日: 2018/04/01
タイトル(英語): Development of Strain and Vibration Sensor using Magnetostriction of Magnetic Thin Film
著者名: 久保 結人(東北大学 電気通信研究所),枦 修一郎(東北大学 電気通信研究所),横井 甫(東北大学 電気通信研究所),荒井 薫(東北大学 電気通信研究所),石山 和志(東北大学 電気通信研究所)
著者名(英語): Yuito Kubo (Research Institute of Electrical Communication, Tohoku University), Shuichiro Hashi (Research Institute of Electrical Communication, Tohoku University), Hajime Yokoi (Research Institute of Electrical Communication, Tohoku University), Kaoru Ar
キーワード: 歪みセンサ,振動センサ,磁歪,逆磁歪効果,磁性薄膜 Strain sensor,Vibration sensor,Magnetostriction,Inverse magnetostrictive effect,Magnetic thin film
要約(英語): We fabricated a strain sensor using the inverse-magnetostrictive effect of magnetoelastic thin films, and applied it for vibration sensor. The sensor element consisted of 1 turn meander-patterned molybdenum (Mo) film as conductive layer and FeSiB magnetostrictive films that laminated a part of the meander. After annealing the element, the FeSiB films of the sensor element were subject to residual stress from Mo film and Si substrate, which induced a magnetic anisotropy of the FeSiB film via magnetoelastic coupling. From the impedance change of the element under compressive strain the sensor exhibited a gauge factor of 2,160 at a carrier frequency of 150MHz under compressive strain. In addition, a phase-difference detection circuit was fabricated to evaluate the element as a vibration sensor. When an edge load of 20g was attached to the element, the maximum signal of 288mV (45mV/deg.) correspond to vibration was obtained at the mechanical resonance frequency of 20.8Hz.
本誌: 電気学会論文誌E(センサ・マイクロマシン部門誌) Vol.138 No.4 (2018)
本誌掲載ページ: 153-158 p
原稿種別: 論文/日本語
電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/138/4/138_153/_article/-char/ja/
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