Two-step Poly-Si Through-silicon via for High-temperature Process of Bioprobe

カテゴリ: 論文誌(論文単位)

グループ名: 【E】センサ・マイクロマシン部門

発行日: 2018/12/01

タイトル(英語): Two-step Poly-Si Through-silicon via for High-temperature Process of Bioprobe

著者名: Taiki Yasui (Toyohashi University of Technology), Shota Yamagiwa (Toyohashi University of Technology), Hiroshi Kubo (Toyohashi University of Technology), Shinnosuke Idogawa (Toyohashi University of Technology), Yoshihiro Kubota (Toyohashi University of Te

著者名(英語): Taiki Yasui (Toyohashi University of Technology), Shota Yamagiwa (Toyohashi University of Technology), Hiroshi Kubo (Toyohashi University of Technology), Shinnosuke Idogawa (Toyohashi University of Technology), Yoshihiro Kubota (Toyohashi University of Te

キーワード: through-silicon via (TSV)，poly-Si，bioprobe，VLS growth

要約(英語): TSV (Through-Silicon Via) is a technology, which realizes an electrical connection from the surface to the backside of the silicon (Si) substrate, offering advantages of device minimization for bioprobe applications. To realize the TSV, copper (Cu) has widely been used as the via material. However, Cu cannot be used for a high temperature process (e.g., 700℃ for Si growth process). To realize TSVs for high temperature processes, here we propose a poly-Si-based ‘two-step TSV', which consists of different hole sizes at the surface and bottom of the Si substrate. By utilizing deep reactive-ion etching (RIE), a 50-μm-diameter and 240-μm-depth hole was formed on the backside of the substrate, while a 12-μm-diameter and 10-μm-depth one was formed on the surface side of the substrate with the same alignment. The TSV is then filled with heavily-doped poly-Si, which is simultaneously deposited in the process of Si2H6 gas-based vapor-liquid-solid (VLS) growth of Si-microneedles. The current-voltage characteristics of the fabricated TSV show a linear behavior with a resistance of 6 kΩ, confirming the feasibility of the proposed TSV.

本誌: 電気学会論文誌E（センサ・マイクロマシン部門誌） Vol.138 No.12 （2018） 特集：生体情報センシング技術

本誌掲載ページ: 533-538 p

原稿種別: 論文／英語

電子版へのリンク: https://www.jstage.jst.go.jp/article/ieejsmas/138/12/138_533/_article/-char/ja/